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Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization
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Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization
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Date
1997
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lukyanchikova, N. B.
;
Petrichuk, M. V.
;
Garbar, N. P.
;
Simoen, Eddy
;
Claeys, C.
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1849
since deposited on 2021-09-30
Acq. date: 2025-12-11
Citations
Metrics
Views
1849
since deposited on 2021-09-30
Acq. date: 2025-12-11
Citations