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Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization

Date

1997
Proceedings Paper
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dc.contributor.authorLukyanchikova, N. B.
dc.contributor.authorPetrichuk, M. V.
dc.contributor.authorGarbar, N. P.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-30T09:17:21Z
dc.date.available2021-09-30T09:17:21Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2002
dc.source.beginpage131
dc.source.conferenceProceedings 1997 International Semiconductor Device Research Symposium
dc.source.conferencelocation
dc.source.endpage134
dc.title

Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization

dc.typeProceedings paper
dspace.entity.typePublication
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