Publication:

An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors

Date

2021
Journal article
https://doi.org/10.1109/TED.2021.3072878
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dc.contributor.authorChien, Yu-Chieh
dc.contributor.authorLondono Ramirez, Horacio
dc.contributor.authorKuo, Chuan-Wei
dc.contributor.authorTsao, Yu-Ching
dc.contributor.authorNag, Manoj
dc.contributor.authorChang, Ting-Chang
dc.contributor.authorAng, Kah-Wee
dc.contributor.imecauthorLondono Ramirez, Horacio
dc.contributor.imecauthorNag, Manoj
dc.contributor.orcidextChien, Yu-Chieh::0000-0002-8491-6483
dc.contributor.orcidimecLondono Ramirez, Horacio::0000-0003-3456-8975
dc.date.accessioned2022-06-23T14:05:32Z
dc.date.available2021-11-02T16:01:31Z
dc.date.available2022-06-23T14:05:32Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2021.3072878
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37909
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2717
dc.source.endpage2722
dc.source.issue6
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume68
dc.subject.keywordsTHIN-FILM TRANSISTORS
dc.subject.keywordsTHRESHOLD VOLTAGE
dc.subject.keywordsSERIES RESISTANCE
dc.subject.keywordsMOBILITY
dc.subject.keywordsCRYSTALLINE
dc.subject.keywordsMODEL
dc.title

An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors

dc.typeJournal article
dspace.entity.typePublication
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