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Energy and spatial distributions of electron traps throughout Sio2/Al2O3 stacks as the IPD in flash memory application
Publication:
Energy and spatial distributions of electron traps throughout Sio2/Al2O3 stacks as the IPD in flash memory application
Date
2010
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zheng, X.F.
;
Zhang, W.D.
;
Govoreanu, Bogdan
;
Ruiz Aguado, Daniel
;
Zhang, .F.
;
Van Houdt, Jan
Journal
IEEE Transactions on Electron Devices
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1884
since deposited on 2021-10-19
Acq. date: 2025-10-25
Citations
Metrics
Views
1884
since deposited on 2021-10-19
Acq. date: 2025-10-25
Citations