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Energy and spatial distributions of electron traps throughout Sio2/Al2O3 stacks as the IPD in flash memory application

Date

2010
Journal article
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dc.contributor.authorZheng, X.F.
dc.contributor.authorZhang, W.D.
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.authorZhang, .F.
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-19T01:05:21Z
dc.date.available2021-10-19T01:05:21Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18428
dc.source.beginpage288
dc.source.endpage296
dc.source.issue1
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume57
dc.title

Energy and spatial distributions of electron traps throughout Sio2/Al2O3 stacks as the IPD in flash memory application

dc.typeJournal article
dspace.entity.typePublication
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