Publication:
Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials
Date
| dc.contributor.author | Jacob, A. P. | |
| dc.contributor.author | Myrberg, T. | |
| dc.contributor.author | Yousif, M. Y. A. | |
| dc.contributor.author | Nur, O. | |
| dc.contributor.author | Willander, M. | |
| dc.contributor.author | Lundgren, P. | |
| dc.contributor.author | Sveinbjörnson, E. Ö. | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.date.accessioned | 2021-10-14T21:53:06Z | |
| dc.date.available | 2021-10-14T21:53:06Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/6425 | |
| dc.source.beginpage | 1088 | |
| dc.source.conference | XI International Workshop on Physics of Semiconductor Devices - IWPSD | |
| dc.source.conferencedate | 11/12/2001 | |
| dc.source.conferencelocation | New Delhi India | |
| dc.source.endpage | 1095 | |
| dc.title | Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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