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Articles
N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:C
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N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:C
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Meunier-Beillard, Philippe
;
Caymax, Matty
;
Van Nieuwenhuysen, Kris
;
Doumen, Geert
;
Brijs, Bert
;
Hopstaken, M.
;
Geenen, Luc
;
Vandervorst, Wilfried
Journal
Applied Surface Science
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2076
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Acq. date: 2025-12-10
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Metrics
Views
2076
since deposited on 2021-10-15
3
last month
Acq. date: 2025-12-10
Citations