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N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:C

Date

2004
Journal article
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dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorVan Nieuwenhuysen, Kris
dc.contributor.authorDoumen, Geert
dc.contributor.authorBrijs, Bert
dc.contributor.authorHopstaken, M.
dc.contributor.authorGeenen, Luc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDoumen, Geert
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-15T14:52:31Z
dc.date.available2021-10-15T14:52:31Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9299
dc.source.beginpage31
dc.source.endpage35
dc.source.issue1_4
dc.source.journalApplied Surface Science
dc.source.volume224
dc.title

N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:C

dc.typeJournal article
dspace.entity.typePublication
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