Publication:

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Date

2020
Proceedings Paper
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dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorYou, Shuzhen
dc.contributor.authorGeens, Karen
dc.contributor.authorBorga, Matteo
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidextDe Santi, Carlo::0000-0001-6064-077X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-01-25T11:41:17Z
dc.date.available2021-11-02T16:05:40Z
dc.date.available2022-01-25T11:40:09Z
dc.date.available2022-01-25T11:41:17Z
dc.date.issued2020
dc.identifier.eisbn978-1-7281-3199-3
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38220
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateAPR 28-MAY 30, 2020
dc.source.conferencelocationDallas, TX, USA
dc.source.journalna
dc.source.numberofpages5
dc.title

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

dc.typeProceedings paper
dspace.entity.typePublication
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