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Electrical performance and scalability of Ni-monosilicide towards sub 0.13 μm technologies

Date

2001
Presentation
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dc.contributor.authorLauwers, A.
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorLindsay, Richard
dc.contributor.authorSteegen, An
dc.contributor.authorRoelandts, Nico
dc.contributor.authorLossen, F.
dc.contributor.authorVrancken, Christa
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-10-14T17:14:42Z
dc.date.available2021-10-14T17:14:42Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5438
dc.source.conferenceSymposium K of the MRS Spring Meeting: Gate Stack and Silicide Issues in Si Processing II; 16-20 April 2001; San Francisco, CA,
dc.source.conferencelocation
dc.title

Electrical performance and scalability of Ni-monosilicide towards sub 0.13 μm technologies

dc.typeOral presentation
dspace.entity.typePublication
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