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Modelling negative bias temperature instabilities in hole-channel metal-oxide-semiconductor field effect transistors with ultrathin gate oxide layers
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Modelling negative bias temperature instabilities in hole-channel metal-oxide-semiconductor field effect transistors with ultrathin gate oxide layers
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Houssa, Michel
;
Aoulaiche, Marc
;
Autran, L.
;
Parthasarathy, C.
;
Revil, N.
;
Vincent, E.
Journal
Journal of Applied Physics
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Metrics
Views
1801
since deposited on 2021-10-15
1
last month
1
last week
Acq. date: 2025-12-17
Citations