Publication:
Modelling negative bias temperature instabilities in hole-channel metal-oxide-semiconductor field effect transistors with ultrathin gate oxide layers
Date
| dc.contributor.author | Houssa, Michel | |
| dc.contributor.author | Aoulaiche, Marc | |
| dc.contributor.author | Autran, L. | |
| dc.contributor.author | Parthasarathy, C. | |
| dc.contributor.author | Revil, N. | |
| dc.contributor.author | Vincent, E. | |
| dc.contributor.imecauthor | Houssa, Michel | |
| dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
| dc.date.accessioned | 2021-10-15T13:55:29Z | |
| dc.date.available | 2021-10-15T13:55:29Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9058 | |
| dc.source.beginpage | 2786 | |
| dc.source.endpage | 2791 | |
| dc.source.issue | 5 | |
| dc.source.journal | Journal of Applied Physics | |
| dc.source.volume | 95 | |
| dc.title | Modelling negative bias temperature instabilities in hole-channel metal-oxide-semiconductor field effect transistors with ultrathin gate oxide layers | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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