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Record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

Date

2019
Journal article
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dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCott, Daire
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorLoo, Roger
dc.contributor.authorWostyn, Kurt
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorConard, Thierry
dc.contributor.authorSuhard, Samuel
dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorDekkers, Harold
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorSuhard, Samuel
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-27T07:27:05Z
dc.date.available2021-10-27T07:27:05Z
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32453
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8897623
dc.source.beginpage5387
dc.source.endpage5392
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume66
dc.title

Record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

dc.typeJournal article
dspace.entity.typePublication
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