Publication:

Replacement metal gate/high-k last technology for aggressively scaled planar and FinFET-based devices

Date

2014
Proceedings Paper
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorLee, Jae Woo
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCho, Moon Ju
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorThean, Aaron
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T07:42:23Z
dc.date.available2021-10-22T07:42:23Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24753
dc.identifier.urlhttp://ecst.ecsdl.org/content/61/2/225.abstract
dc.source.beginpage225
dc.source.conferenceDielectrics for Nanosystems 6: Materials Science, Processing, Reliability, and Manufacturing
dc.source.conferencedate11/05/2014
dc.source.conferencelocationOrlando, FL USA
dc.source.endpage235
dc.title

Replacement metal gate/high-k last technology for aggressively scaled planar and FinFET-based devices

dc.typeProceedings paper
dspace.entity.typePublication
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