Publication:

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors fron capacitance-voltage characteristics measured at various temperatures

Date

2014
Journal article
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dc.contributor.authorDou, Chunmeng
dc.contributor.authorLin, Dennis
dc.contributor.authorVais, Abhitosh
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorChen, Han-Ping
dc.contributor.authorMartens, Koen
dc.contributor.authorKakushima, Kuniyuki
dc.contributor.authorIwai, Hiroshi
dc.contributor.authorTaur, Yuan
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.date.accessioned2021-10-22T01:18:34Z
dc.date.available2021-10-22T01:18:34Z
dc.date.issued2014
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23771
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271413004757
dc.source.beginpage746
dc.source.endpage754
dc.source.issue4
dc.source.journalMicroelectronics Reliability
dc.source.volume54
dc.title

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors fron capacitance-voltage characteristics measured at various temperatures

dc.typeJournal article
dspace.entity.typePublication
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