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Investigation of mask defect density in full field EUV lithography

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dc.contributor.authorJonckheere, Rik
dc.contributor.authorVan Den Heuvel, Dieter
dc.contributor.authorLamantia, Matthew
dc.contributor.authorHermans, Jan
dc.contributor.authorHendrickx, Eric
dc.contributor.authorGoethals, Mieke
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorRonse, Kurt
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorVan Den Heuvel, Dieter
dc.contributor.imecauthorHermans, Jan
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.contributor.orcidimecHermans, Jan::0000-0003-1249-8902
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.date.accessioned2021-10-17T23:13:51Z
dc.date.available2021-10-17T23:13:51Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15549
dc.source.conferenceInternational Symposium on Extreme Ultraviolet Lithography
dc.source.conferencedate18/10/2009
dc.source.conferencelocationPrague Czech Republic
dc.title

Investigation of mask defect density in full field EUV lithography

dc.typeProceedings paper
dspace.entity.typePublication
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