Publication:

High-performance IGZO Schottky diode with oxygen-treated metal contacts

Date

2012
Presentation
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dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorCheyns, David
dc.contributor.authorSteudel, Soeren
dc.contributor.authorMyny, Kris
dc.contributor.authorNag, Manoj
dc.contributor.authorKe, Tung Huei
dc.contributor.authorSchols, Sarah
dc.contributor.authorGenoe, Jan
dc.contributor.authorGielen, Georges
dc.contributor.authorHeremans, Paul
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorCheyns, David
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorKe, Tung Huei
dc.contributor.imecauthorSchols, Sarah
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGielen, Georges
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecCheyns, David::0000-0002-1327-8752
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecKe, Tung Huei::0000-0001-8381-4998
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.accessioned2021-10-20T17:24:39Z
dc.date.available2021-10-20T17:24:39Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21666
dc.source.conferenceMRS Fall Symposium Z: Oxide Semiconductors
dc.source.conferencedate25/11/2012
dc.source.conferencelocationBoston, MA USA
dc.title

High-performance IGZO Schottky diode with oxygen-treated metal contacts

dc.typeOral presentation
dspace.entity.typePublication
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