Publication:

Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS

Date

2013
Proceedings Paper
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dc.contributor.authorGupta, Somya
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVrielinck, Henk
dc.contributor.authorMerckling, Clement
dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorLoo, Roger
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-21T08:04:16Z
dc.date.available2021-10-21T08:04:16Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22444
dc.identifier.urlhttp://ecst.ecsdl.org/content/53/1/251.full.pdf+html
dc.source.beginpage251
dc.source.conferenceGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
dc.source.conferencedate12/05/2013
dc.source.conferencelocationToronto Canada
dc.source.endpage258
dc.title

Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS

dc.typeProceedings paper
dspace.entity.typePublication
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