Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1-x/Al2O3 interfaces for CBRAM

dc.contributor.author	De Stefano, Francesca
dc.contributor.author	Afanasiev, Valeri
dc.contributor.author	Houssa, Michel
dc.contributor.author	Goux, Ludovic
dc.contributor.author	Opsomer, Karl
dc.contributor.author	Jurczak, Gosia
dc.contributor.author	Stesmans, Andre
dc.contributor.imecauthor	De Stefano, Francesca
dc.contributor.imecauthor	Afanasiev, Valeri
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Goux, Ludovic
dc.contributor.imecauthor	Opsomer, Karl
dc.contributor.imecauthor	Jurczak, Gosia
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.contributor.orcidimec	Goux, Ludovic::0000-0002-1276-2278
dc.date.accessioned	2021-10-22T01:09:56Z
dc.date.available	2021-10-22T01:09:56Z
dc.date.issued	2014
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/23727
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0167931713006011
dc.source.beginpage	9
dc.source.endpage	12
dc.source.journal	Microelectronic Engineering
dc.source.volume	120
dc.title	Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1-x/Al2O3 interfaces for CBRAM
dc.type	Journal article
dspace.entity.type	Publication
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