Publication:

Influence of the process sequence and termal budget on the straion fof SiC stressor layers formed by Ion Implantation

Date

2010-10
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorRosseel, Erik
dc.contributor.authorOrtolland, Claude
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSchram, Tom
dc.contributor.authorFalepin, Annelies
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAmeen, Mike
dc.contributor.authorRubin, Leonard
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorFalepin, Annelies
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.date.accessioned2021-10-18T21:01:33Z
dc.date.available2021-10-18T21:01:33Z
dc.date.issued2010-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17910
dc.source.conference18th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate29/09/2010
dc.source.conferencelocationGainesville, FL USA
dc.title

Influence of the process sequence and termal budget on the straion fof SiC stressor layers formed by Ion Implantation

dc.typeMeeting abstract
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions