Publication:
Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length
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1946 since deposited on 2021-10-17
1last month
Acq. date: 2025-12-08
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Metrics
Views
1946 since deposited on 2021-10-17
1last month
Acq. date: 2025-12-08
Citations