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FEG-TEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD
Publication:
FEG-TEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD
Date
2003
Proceedings Paper
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8112.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Benedetti, Alessandro
;
Norris, D.J.
;
Hetherington, C.J.D.
;
Cullis, A.G.
;
Robbins, D.J.
;
Wallis, D.J.
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1908
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1908
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations