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FEG-TEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD

Date

2003
Proceedings Paper
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dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorNorris, D.J.
dc.contributor.authorHetherington, C.J.D.
dc.contributor.authorCullis, A.G.
dc.contributor.authorRobbins, D.J.
dc.contributor.authorWallis, D.J.
dc.date.accessioned2021-10-15T04:00:48Z
dc.date.available2021-10-15T04:00:48Z
dc.date.embargo9999-12-31
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7198
dc.source.beginpage151
dc.source.conferenceMicroscopy of Semiconducting Materials XIII
dc.source.conferencedate31/03/2003
dc.source.conferencelocationCambridge UK
dc.source.endpage154
dc.title

FEG-TEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD

dc.typeProceedings paper
dspace.entity.typePublication
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