Publication:
Investigations and physical modelling of saturation effects in lateral DMOS transistor architectures based on the concept of intrinsic drain voltage
Date
| dc.contributor.author | Anghel, C. | |
| dc.contributor.author | Hefyene, N. | |
| dc.contributor.author | Ionescu, A. M. | |
| dc.contributor.author | Vermandel, Miguel | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Doutrloigne, J. | |
| dc.contributor.author | Gillon, R. | |
| dc.contributor.author | Frere, S. | |
| dc.contributor.author | Maier., C. | |
| dc.contributor.author | Mourier, Y. | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.date.accessioned | 2021-10-14T16:36:10Z | |
| dc.date.available | 2021-10-14T16:36:10Z | |
| dc.date.issued | 2001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5012 | |
| dc.source.beginpage | 399 | |
| dc.source.conference | Proceedings of the 31st European Solid-State Device Research Conference | |
| dc.source.conferencedate | 11/09/2001 | |
| dc.source.conferencelocation | Nuremberg Germany | |
| dc.source.endpage | 402 | |
| dc.title | Investigations and physical modelling of saturation effects in lateral DMOS transistor architectures based on the concept of intrinsic drain voltage | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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