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Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress
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Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Toledano Luque, Maria
;
Kaczer, Ben
;
Roussel, Philippe
;
Cho, Moon Ju
;
Grasser, Tibor
;
Groeseneken, Guido
Journal
Journal of Vacuum Science and Technology B
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Acq. date: 2025-12-16
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Views
1825
since deposited on 2021-10-19
2
last month
Acq. date: 2025-12-16
Citations