Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

dc.contributor.author	Toledano Luque, Maria
dc.contributor.author	Kaczer, Ben
dc.contributor.author	Roussel, Philippe
dc.contributor.author	Cho, Moon Ju
dc.contributor.author	Grasser, Tibor
dc.contributor.author	Groeseneken, Guido
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.imecauthor	Roussel, Philippe
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimec	Roussel, Philippe::0000-0002-0402-8225
dc.date.accessioned	2021-10-19T19:44:04Z
dc.date.available	2021-10-19T19:44:04Z
dc.date.embargo	9999-12-31
dc.date.issued	2011
dc.identifier.issn	1071-1023
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/19897
dc.source.beginpage	01AA04
dc.source.issue	1
dc.source.journal	Journal of Vacuum Science and Technology B
dc.source.volume	29
dc.title	Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress
dc.type	Journal article
dspace.entity.type	Publication
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