Publication:

Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain

Date

2007
Journal article
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dc.contributor.authorShickova, Adelina
dc.contributor.authorKaczer, Ben
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVerheyen, Peter
dc.contributor.authorEneman, Geert
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAbsil, Philippe
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.accessioned2021-10-16T19:40:29Z
dc.date.available2021-10-16T19:40:29Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12890
dc.source.beginpage1906
dc.source.endpage1909
dc.source.issue9_10
dc.source.journalMicroelectronic Engineering
dc.source.volume84
dc.title

Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain

dc.typeJournal article
dspace.entity.typePublication
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