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ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques
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ESD sensitivity of 65-nm fully depleted SOI MOSFETs with different strain-inducing techniques
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Date
2008
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17762.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Griffoni, A.
;
Tazzoli, A.
;
Gerardin, S.
;
Simoen, Eddy
;
Claeys, Cor
;
Meneghesso, G.
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1941
since deposited on 2021-10-17
2
last month
Acq. date: 2026-01-26
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Statistics
Views
1941
since deposited on 2021-10-17
2
last month
Acq. date: 2026-01-26
Citations