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Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices
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Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices
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Date
2013
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lieten, Ruben
;
Maeda, Tatsuro
;
Jevasuwan, Wipakorn
;
Hattori, Hiroyuki
;
Uchida, Noriyuki
;
Miura, Shu
;
Tanaka, Masatoshi
;
Seo, Jin Won
;
Locquet, Jean-Pierre
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1947
since deposited on 2021-10-21
4
last month
Acq. date: 2025-12-11
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Views
1947
since deposited on 2021-10-21
4
last month
Acq. date: 2025-12-11
Citations