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Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices
Publication:
Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices
Date
2013
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lieten, Ruben
;
Maeda, Tatsuro
;
Jevasuwan, Wipakorn
;
Hattori, Hiroyuki
;
Uchida, Noriyuki
;
Miura, Shu
;
Tanaka, Masatoshi
;
Seo, Jin Won
;
Locquet, Jean-Pierre
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1941
since deposited on 2021-10-21
423
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1941
since deposited on 2021-10-21
423
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations