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Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices

Date

2013
Proceedings Paper
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dc.contributor.authorLieten, Ruben
dc.contributor.authorMaeda, Tatsuro
dc.contributor.authorJevasuwan, Wipakorn
dc.contributor.authorHattori, Hiroyuki
dc.contributor.authorUchida, Noriyuki
dc.contributor.authorMiura, Shu
dc.contributor.authorTanaka, Masatoshi
dc.contributor.authorSeo, Jin Won
dc.contributor.authorLocquet, Jean-Pierre
dc.contributor.imecauthorLieten, Ruben
dc.date.accessioned2021-10-21T09:24:41Z
dc.date.available2021-10-21T09:24:41Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22698
dc.source.beginpage1202
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate24/09/2013
dc.source.conferencelocationFukuoka Japan
dc.source.endpage1203
dc.title

Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices

dc.typeProceedings paper
dspace.entity.typePublication
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