Publication:

HBM ESD robustness of GaN-on-Si Schottky diodes

Date

2012
Journal article
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dc.contributor.authorChen, Shih-Hung
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorScholz, Mirko
dc.contributor.authorMarcon, Denis
dc.contributor.authorGallerano, A.
dc.contributor.authorLafonteese, D.
dc.contributor.authorConcannon, A.
dc.contributor.authorVashchenko, V.A.
dc.contributor.authorHopper, P.
dc.contributor.authorBychikhin, S.
dc.contributor.authorPogany, D.
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-20T10:14:27Z
dc.date.available2021-10-20T10:14:27Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20439
dc.source.beginpage589
dc.source.endpage598
dc.source.issue4
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume12
dc.title

HBM ESD robustness of GaN-on-Si Schottky diodes

dc.typeJournal article
dspace.entity.typePublication
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