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Structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy

Date

2013
Journal article
https://doi.org/10.1039/C3CE41836G
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dc.contributor.authorZhang, Liyang
dc.contributor.authorLieten, Ruben
dc.contributor.authorZhu, Tongtong
dc.contributor.authorLeys, Maarten
dc.contributor.authorJiang, Sijia
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-21T15:05:31Z
dc.date.available2021-10-21T15:05:31Z
dc.date.issued2013
dc.identifier.doi10.1039/C3CE41836G
dc.identifier.issn1466-8033
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23446
dc.source.beginpage10590
dc.source.endpage10596
dc.source.journalCrystEngComm
dc.source.volume15
dc.title

Structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy

dc.typeJournal article
dspace.entity.typePublication
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