Publication:

Plasma etch selectivity study and material screening for Self-Aligned Gate Contact (SAGC)

Date

2019
Proceedings Paper
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dc.contributor.authorRadisic, Dunja
dc.contributor.authorDemand, Marc
dc.contributor.authorChan, Shihsheng
dc.contributor.authorDemuynck, Steven
dc.contributor.authorKumar, Kaushik
dc.contributor.authorMetz, Andrew
dc.contributor.authorTeugels, Lieve
dc.contributor.authorSun, Junling
dc.contributor.authorSmith, Jeffrey
dc.contributor.authorSebaai, Farid
dc.contributor.authorHopf, Toby
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorKumar, Kaushik
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.date.accessioned2021-10-27T16:36:43Z
dc.date.available2021-10-27T16:36:43Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33848
dc.identifier.urlhttps://doi.org/10.1117/12.2505129
dc.source.beginpage109630P
dc.source.conferenceAdvanced Etch Technology for Nanopatterning VIII
dc.source.conferencedate24/02/2019
dc.source.conferencelocationSan Jose, CA USA
dc.title

Plasma etch selectivity study and material screening for Self-Aligned Gate Contact (SAGC)

dc.typeProceedings paper
dspace.entity.typePublication
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