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The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Date

2015
Proceedings Paper
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dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorLin, Dennis
dc.contributor.authorStoffels, Steve
dc.contributor.authorKang, Xuanwu
dc.contributor.authorRoelofs, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T01:09:11Z
dc.date.available2021-10-23T01:09:11Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26192
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7123430
dc.source.beginpage225
dc.source.conferenceIEEE 27th International Symposium on Power Semiconductor Devices and ICs - ISPSD
dc.source.conferencedate10/05/2014
dc.source.conferencelocationHong Kong China
dc.source.endpage228
dc.title

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

dc.typeProceedings paper
dspace.entity.typePublication
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