Publication:

Part II: Investigation of subthreshold swing in line tunnel FETs using bias stress measurements

Date

2013
Journal article
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dc.contributor.authorWalke, Amey
dc.contributor.authorVandooren, Anne
dc.contributor.authorKaczer, Ben
dc.contributor.authorVerhulst, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorSimoen, Eddy
dc.contributor.authorHeyns, Marc
dc.contributor.authorRao, V Ramgopal
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-21T14:23:26Z
dc.date.available2021-10-21T14:23:26Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23368
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6658861&queryText%3DPart+II%3A+Investigation+of+subthreshold+swin
dc.source.beginpage4065
dc.source.endpage4072
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume60
dc.title

Part II: Investigation of subthreshold swing in line tunnel FETs using bias stress measurements

dc.typeJournal article
dspace.entity.typePublication
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