Publication:

Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition

Date

2008
Meeting abstract
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dc.contributor.authorBellenger, Florence
dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, J.
dc.contributor.authorHoussa, Michel
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T06:16:38Z
dc.date.available2021-10-17T06:16:38Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13366
dc.source.beginpage1963
dc.source.conference214th ECS Meeting
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
dc.title

Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition

dc.typeMeeting abstract
dspace.entity.typePublication
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