Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Conference contributions
Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations
Publication:
Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations
Copy permalink
Date
2013
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
27117.pdf
294.81 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Asai, Yuki
;
Hori, Masato
;
Yoneda, Masashi
;
Tsunoda, Isao
;
Takakura, Kenichiro
;
Bargallo Gonzalez, Mireia
;
Simoen, Eddy
;
Claeys, Cor
;
Yoshino, Kenji
Journal
Abstract
Description
Metrics
Views
1987
since deposited on 2021-10-21
Acq. date: 2025-12-11
Citations
Metrics
Views
1987
since deposited on 2021-10-21
Acq. date: 2025-12-11
Citations