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Physical-based RTN modeling of ring oscillators in 40-nm SiON and 28-nm HKMG by bimodal defect-centric behaviors

Date

2016
Proceedings Paper
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dc.contributor.authorOshima, Azusa
dc.contributor.authorKobayashi, Kazutoshi
dc.contributor.authorKishida, Ryo
dc.contributor.authorKomawako, Takuya
dc.contributor.authorWeckx, Pieter
dc.contributor.authorKaczer, Ben
dc.contributor.authorMatsumoto, Takashi
dc.contributor.authorOnodera, Hidetoshi
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-23T13:24:29Z
dc.date.available2021-10-23T13:24:29Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27099
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7605213/
dc.source.beginpage327
dc.source.conference21st International Conference on Simulation of Semiconductor Processes and Process - SISPAD
dc.source.conferencedate13/06/2016
dc.source.conferencelocationNürnberg Germany
dc.source.endpage330
dc.title

Physical-based RTN modeling of ring oscillators in 40-nm SiON and 28-nm HKMG by bimodal defect-centric behaviors

dc.typeProceedings paper
dspace.entity.typePublication
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