Publication:
Dual gate synthetic WS2 MOSFETs with 120 mu S/mu m Gm 2.7 mu F/cm(2) capacitance and ambipolar channel
| dc.contributor.author | Lin, Dennis | |
| dc.contributor.author | Wu, Xiangyu | |
| dc.contributor.author | Cott, Daire | |
| dc.contributor.author | Verreck, Devin | |
| dc.contributor.author | Groven, Benjamin | |
| dc.contributor.author | Sergeant, Stefanie | |
| dc.contributor.author | Smets, Quentin | |
| dc.contributor.author | Sutar, Surajit | |
| dc.contributor.author | Asselberghs, Inge | |
| dc.contributor.author | Radu, Iuliana | |
| dc.contributor.imecauthor | Lin, Dennis | |
| dc.contributor.imecauthor | Wu, Xiangyu | |
| dc.contributor.imecauthor | Cott, Daire | |
| dc.contributor.imecauthor | Verreck, Devin | |
| dc.contributor.imecauthor | Groven, Benjamin | |
| dc.contributor.imecauthor | Sergeant, Stephanie | |
| dc.contributor.imecauthor | Smets, Quentin | |
| dc.contributor.imecauthor | Sutar, Surajit | |
| dc.contributor.imecauthor | Asselberghs, Inge | |
| dc.contributor.imecauthor | Radu, Iuliana | |
| dc.contributor.imecauthor | Sergeant, Stefanie | |
| dc.contributor.orcidimec | Verreck, Devin::0000-0002-3833-5880 | |
| dc.contributor.orcidimec | Groven, Benjamin::0000-0002-5781-7594 | |
| dc.contributor.orcidimec | Smets, Quentin::0000-0002-2356-5915 | |
| dc.contributor.orcidimec | Radu, Iuliana::0000-0002-7230-7218 | |
| dc.contributor.orcidimec | Sergeant, Stefanie::0000-0001-9923-0903 | |
| dc.date.accessioned | 2022-01-10T10:18:51Z | |
| dc.date.available | 2021-12-06T02:06:17Z | |
| dc.date.available | 2022-01-10T10:18:51Z | |
| dc.date.issued | 2020 | |
| dc.identifier.doi | 10.1109/IEDM13553.2020.9372055 | |
| dc.identifier.eisbn | 978-1-7281-8888-1 | |
| dc.identifier.issn | 2380-9248 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/38541 | |
| dc.publisher | IEEE | |
| dc.source.conference | IEEE International Electron Devices Meeting (IEDM) | |
| dc.source.conferencedate | DEC 12-18, 2020 | |
| dc.source.conferencelocation | San Francisco, CA, USA | |
| dc.source.journal | na | |
| dc.source.numberofpages | 4 | |
| dc.title | Dual gate synthetic WS2 MOSFETs with 120 mu S/mu m Gm 2.7 mu F/cm(2) capacitance and ambipolar channel | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
| Publication available in collections: |