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Quantification of elements at the Si/SiO2-interface

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dc.contributor.authorJanssens, Tom
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-14T13:06:40Z
dc.date.available2021-10-14T13:06:40Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4452
dc.source.beginpage401
dc.source.conferenceSecondary Ion Mass Spectrometry - SIMS XII. Proceedings of the 12th International Conference
dc.source.conferencedate5/09/1999
dc.source.conferencelocationBrussel Belgium
dc.source.endpage404
dc.title

Quantification of elements at the Si/SiO2-interface

dc.typeProceedings paper
dspace.entity.typePublication
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