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The application of an ultra-thin ALD HfSiON cap layer on SiON dielectrics for Ni-FUSI CMOS technology targeting at low power applications

Date

2007
Journal article
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dc.contributor.authorChang, Shou-Zen
dc.contributor.authorYu, HongYu
dc.contributor.authorVeloso, Anabela
dc.contributor.authorLauwers, Anne
dc.contributor.authorDelabie, Annelies
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorKerner, Christoph
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-16T15:14:42Z
dc.date.available2021-10-16T15:14:42Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11839
dc.source.beginpage634
dc.source.endpage636
dc.source.issue7
dc.source.journalIEEE Electron Device Letters
dc.source.volume28
dc.title

The application of an ultra-thin ALD HfSiON cap layer on SiON dielectrics for Ni-FUSI CMOS technology targeting at low power applications

dc.typeJournal article
dspace.entity.typePublication
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