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Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
Publication:
Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
Date
2021
Journal article
https://doi.org/10.1109/TNS.2021.3066612
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Gorchichko, Mariia
;
Zhang, En Xia
;
Wang, Pan
;
Bonaldo, Stefano
;
Schrimpf, Ronald D.
;
Reed, Robert A.
;
Linten, Dimitri
;
Mitard, Jerome
;
Fleetwood, Daniel M.
Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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1869
since deposited on 2021-11-02
Acq. date: 2025-10-23
Citations
Metrics
Views
1869
since deposited on 2021-11-02
Acq. date: 2025-10-23
Citations