Publication:

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Date

2021
Journal article
https://doi.org/10.1109/TNS.2021.3066612
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dc.contributor.authorGorchichko, Mariia
dc.contributor.authorZhang, En Xia
dc.contributor.authorWang, Pan
dc.contributor.authorBonaldo, Stefano
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorReed, Robert A.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidextBonaldo, Stefano::0000-0003-0712-5036
dc.contributor.orcidextSchrimpf, Ronald D.::0000-0001-7419-2701
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2022-03-31T12:20:47Z
dc.date.available2021-11-02T16:01:59Z
dc.date.available2022-03-31T08:35:24Z
dc.date.available2022-03-31T12:20:47Z
dc.date.issued2021
dc.identifier.doi10.1109/TNS.2021.3066612
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37952
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage687
dc.source.endpage696
dc.source.issue5
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages10
dc.source.volume68
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.subject.keywordsRANDOM TELEGRAPH NOISE
dc.subject.keywords1/F NOISE
dc.subject.keywordsRADIATION RESPONSE
dc.subject.keywordsINTERFACE STATES
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsMOS
dc.subject.keywordsDEFECTS
dc.subject.keywordsHFO2
dc.subject.keywordsDEPENDENCE
dc.title

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

dc.typeJournal article
dspace.entity.typePublication
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