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Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics

Date

2003
Proceedings Paper
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dc.contributor.authorKerber, Andreas
dc.contributor.authorCartier, Eduard
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKim, Young-Chang
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.date.accessioned2021-10-15T05:09:01Z
dc.date.available2021-10-15T05:09:01Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7729
dc.source.beginpage159
dc.source.conferenceVLSI Technology Symposium
dc.source.conferencedate10/06/2003
dc.source.conferencelocationKyoto Japan
dc.source.endpage160
dc.title

Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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