Publication:
Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode
| dc.contributor.author | Lin, Wei-Syuan | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Huang, Zhen-Hong | |
| dc.contributor.author | Lo, Ting-Chun | |
| dc.contributor.author | Borga, Matteo | |
| dc.contributor.author | Wellekens, Dirk | |
| dc.contributor.author | Posthuma, Niels | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.author | Wu, Tian-Li | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Borga, Matteo | |
| dc.contributor.imecauthor | Wellekens, Dirk | |
| dc.contributor.imecauthor | Posthuma, Niels | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
| dc.contributor.orcidimec | Wellekens, Dirk::0000-0003-4532-5784 | |
| dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.date.accessioned | 2024-08-22T08:26:22Z | |
| dc.date.available | 2024-07-04T18:38:12Z | |
| dc.date.available | 2024-08-22T08:26:22Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This work as supported in part by the "Center of the Advanced Semiconductor Technology Research" from the Featured Areas Research Center Program within the Framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan; and in part by the National Science and Technology Council (NSTC), Taiwan, under Grant 112-2628-E-A49-020-MY3. The work of Zhen-Hong Huang was supported by UMC Fellowship during his Ph.D. Research. | |
| dc.identifier.doi | 10.1109/TED.2024.3412095 | |
| dc.identifier.issn | 0018-9383 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44118 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 4874 | |
| dc.source.endpage | 4878 | |
| dc.source.issue | 8 | |
| dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
| dc.source.numberofpages | 5 | |
| dc.source.volume | 71 | |
| dc.title | Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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