Publication:

Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials

Date

2019
Meeting abstract
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dc.contributor.authorMargetis, Joe
dc.contributor.authorKohen, David
dc.contributor.authorPorret, Clément
dc.contributor.authorPetersen Barbosa Lima, Lucas
dc.contributor.authorKhazaka, Rami
dc.contributor.authorLoo, Roger
dc.contributor.authorTolle, John
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPetersen Barbosa Lima, Lucas
dc.contributor.imecauthorKhazaka, Rami
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-27T13:29:48Z
dc.date.available2021-10-27T13:29:48Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33534
dc.source.beginpage214
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison USA
dc.source.endpage215
dc.title

Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials

dc.typeMeeting abstract
dspace.entity.typePublication
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