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Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the D-IT(E) profile

 
dc.contributor.authorKoladi Mootheri, Vivek
dc.contributor.authorWu, Xiangyu
dc.contributor.authorCott, Daire
dc.contributor.authorGroven, Benjamin
dc.contributor.authorHeyns, Marc
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.authorLin, Dennis
dc.contributor.imecauthorKoladi Mootheri, Vivek
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorLin, Dennis
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecKoladi Mootheri, Vivek::0000-0002-1373-8405
dc.date.accessioned2023-01-05T14:31:06Z
dc.date.available2021-11-02T15:59:51Z
dc.date.available2023-01-05T14:31:06Z
dc.date.issued2021
dc.identifier.doi10.1016/j.sse.2021.108035
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37791
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage108035
dc.source.endpagena
dc.source.issuena
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages4
dc.source.volume183
dc.title

Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the D-IT(E) profile

dc.typeJournal article
dspace.entity.typePublication
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