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Interplay of 2D and 3D charge carriers in Si-d-doped InSb layers grown epitaxially on GaAs
Publication:
Interplay of 2D and 3D charge carriers in Si-d-doped InSb layers grown epitaxially on GaAs
Date
1996
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
De Keyser, A.
;
Bogaerts, R.
;
Karavolas, V. C.
;
Van Bockstal, L.
;
Herlach, F.
;
Peeters, F. M.
;
Van de Graaf, Willem
;
Borghs, Gustaaf
Journal
Solid-State Electronics
Abstract
Description
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Views
1985
since deposited on 2021-09-29
420
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1985
since deposited on 2021-09-29
420
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations