Publication:

Interplay of 2D and 3D charge carriers in Si-d-doped InSb layers grown epitaxially on GaAs

Date

1996
Journal article
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dc.contributor.authorDe Keyser, A.
dc.contributor.authorBogaerts, R.
dc.contributor.authorKaravolas, V. C.
dc.contributor.authorVan Bockstal, L.
dc.contributor.authorHerlach, F.
dc.contributor.authorPeeters, F. M.
dc.contributor.authorVan de Graaf, Willem
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-09-29T14:22:38Z
dc.date.available2021-09-29T14:22:38Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1162
dc.source.beginpage395
dc.source.endpage398
dc.source.issue1_8
dc.source.journalSolid-State Electronics
dc.source.volume40
dc.title

Interplay of 2D and 3D charge carriers in Si-d-doped InSb layers grown epitaxially on GaAs

dc.typeJournal article
dspace.entity.typePublication
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