Publication:
NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs
| dc.contributor.author | Xie, Duan | |
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | Arimura, Hiroaki | |
| dc.contributor.author | Capogreco, Elena | |
| dc.contributor.author | Mitard, Jerome | |
| dc.contributor.author | Horiguchi, Naoto | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.imecauthor | Arimura, Hiroaki | |
| dc.contributor.imecauthor | Capogreco, Elena | |
| dc.contributor.imecauthor | Mitard, Jerome | |
| dc.contributor.imecauthor | Horiguchi, Naoto | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.contributor.orcidimec | Mitard, Jerome::0000-0002-7422-079X | |
| dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
| dc.date.accessioned | 2023-04-12T07:48:49Z | |
| dc.date.available | 2023-01-29T03:25:06Z | |
| dc.date.available | 2023-04-12T07:48:49Z | |
| dc.date.issued | 2022 | |
| dc.description.wosFundingText | This work was supported in part by Shaanxi Provincial Innovation Team Project under Grant Number 2020TD-019 and in part by Xi'an Municipal Sciences Plan Project under Grant Number 2021XJZZ0075. | |
| dc.identifier.doi | 10.1109/TED.2022.3212324 | |
| dc.identifier.issn | 0018-9383 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41048 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 6985 | |
| dc.source.endpage | 6990 | |
| dc.source.issue | 12 | |
| dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
| dc.source.numberofpages | 6 | |
| dc.source.volume | 69 | |
| dc.subject.keywords | MOBILITY | |
| dc.subject.keywords | FINFETS | |
| dc.title | NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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